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| SST/U401 Series Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number U401 SST/U404 SST/U406 VGS(off) (V) -0.5 to -2.5 -0.5 to -2.5 -0.5 to -2.5 V(BR)GSS Min (V) -40 -40 -40 gfs Min (mS) 1 1 1 IG Typ (pA) -2 -2 -2 jVGS1 - VGS2j Max (mV) 5 15 40 Features D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 2 pA Low Noise High CMRR: 102 dB Benefits D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High-Speed,Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Description The SST/U401 series of high-performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. This series has a wide selection of offset and drift specifications with the U401 featuring a 5-mV offset and 10-mV/_C drift. The U series' hermetically sealed TO-71 package is available with full military processing (see Military Information). The SST series SO-8 package provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods (see Packaging Information). For similar high-gain products in TO-78 packaging, see the 2N5911/5912 data sheet. TO-71 Narrow Body SOIC S1 D1 G1 NC 1 2 3 4 8 7 6 5 NC G2 D2 S2 G1 Top View SST404, SST406 Top View U401, U404, U406 D1 2 3 4 S2 S1 1 6 5 D2 G2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . 300_C Storage Temperature : U Prefix . . . . . . . . . . . . . . -65 to 200_C SST Prefix . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70247. Applications information may also be obtained via FaxBack, request document #70599. Siliconix S-52424--Rev. E, 14-Apr-97 1 SST/U401 Series Specificationsa Limits U401 SST/U404 SST/U406 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current C Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage Symbol Test Conditions IG = -1 mA, VDS = 0 V IG = "1 mA, VDS = 0 V VGS = 0 V VDS = 15 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 125_C VDG = 15 V, ID = 200 mA TA = 125_C VGS = 0 V, ID = 0.1 mA VDG = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V Typb Min Max Min Max Min Max Unit V(BR)GSS V(BR)G1 - G2 VGS(off) IDSS IGSS IG rDS(on) VGS VGS(F) -58 "45 -1.5 3.5 -2 -1 -2 -0.8 250 -1 0.7 -40 "30 -0.5 0.5 -2.5 10 -25 -40 "30 -0.5 0.5 -2.5 10 -25 -40 "30 -0.5 0.5 -2.5 10 -25 mA pA nA V -15 -10 -15 -10 -15 -10 pA nA W -2.3 -2.3 -2.3 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos gfs gos Ciss VDS = 15 V ID = 200 mA V, f = 1 MHz Crss en VDS = 15 V, ID = 200 mA f = 10 Hz 1.5 3 3 3 nV Hz VDS = 15 V, ID = 200 mA f = 1 kHz 1.5 1.3 1 2 2 1 2 2 1 2 2 mS mS mS mS VDS = 10 V, VGS = 0 V f = 1 kHz 4 2 7 2 7 2 7 5 4 30 8 30 8 30 8 pF 10 20 20 20 Matching Differential Gate-Source Voltage Gate Source Gate-Source Voltage Differential Change with Temperature Common Mode Rejection Ratio |VGS1 VGS2| VDG = 10 V, ID = 200 mA VDG = 10 V ID = 200 mA TA = -55 to 125_C 55 SST404 SST406 All U 102 95 20 40 10 95 25 80 dB mV/_C 5 15 40 mV D|VGS1 VGS2| DT CMRR VDG = 10 to 20 V, ID = 200 mA Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. NNR 2 Siliconix S-52424--Rev. E, 14-Apr-97 SST/U401 Series Typical Characteristics 10 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 8.0 g fs - Forward Transconductance (mS) 100 nA 10 nA I G - Gate Leakage 1 nA 100 pA Gate Leakage Current 8 6.4 IG @ ID = 500 mA TA = 125_C IGSS @ 125_C 50 mA 6 gfs 4.8 50 mA 4 IDSS 2 3.2 10 pA 1 pA 0.1 pA 0 TA = 25_C 1.6 IGSS @ 25_C 0 0 -0.5 -1.0 -1.5 -2.0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -2.5 10 20 30 40 50 VDG - Drain-Gate Voltage (V) 4 Output Characteristics VGS(off) = -1.5 V VGS = 0 V 7 6 Output Characteristics VGS(off) = -2 V VGS = 0 V -0.2 V -0.4 V -0.6 V -0.8 V 3.2 I D - Drain Current (mA) I D - Drain Current (mA) -0.2 V 2.4 -0.4 V 1.6 -0.6 V 0.8 -1.2 V -0.8 V -1.0 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) 1 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) 5 4 3 2 -1.0 V -1.2 V 3 Output Characteristics VGS = 0 V VGS(off) = -1.5 V 4 Output Characteristics VGS(off) = -2 V VGS = 0 V -0.2 V -0.4 V 2.4 I D - Drain Current (mA) -0.2 V 1.8 -0.4 V 1.2 I D - Drain Current (mA) 3.2 2.4 -0.6 V -0.8 V -0.6 V -1.2 V -0.8 V -1.0 V 1.6 -1.0 V 0.8 -1.2 V -1.4 V 0 0.6 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Siliconix S-52424--Rev. E, 14-Apr-97 3 SST/U401 Series Typical Characteristics (Cont'd) 5 Transfer Characteristics VGS(off) = -1.5 V VDS = 15 V 100 Gate-Source Differential Voltage vs. Drain Current VDG = 15 V 4 I D - Drain Current (mA) TA = -55_C 25_C (mV) 3 VGS1 - VGS2 10 SST/U404 2 125_C 1 U401 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) -2 1 0.01 0.1 ID - Drain Current (mA) 1 100 Voltage Differential with Temperature vs. Drain Current VDG = 15 V DTA = 25 to 125_C DTA = -55 to 25_C SST/U404 CMRR (dB) 130 Common Mode Rejection Ratio vs. Drain Current CMRR = 20 log DVDG D VGS1 - VGS2 ( mV/ _C ) 120 110 DVDG = 10 - 20 V D VGS1 - VGS2 10 Dt U401 100 5 - 10 V 90 1 0.01 80 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 150 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) 500 On-Resistance vs. Drain Current 120 VGS(off) = -1.5 V A V - Voltage Gain 90 -2.0 V 400 VGS(off) = -1.0 V 300 -1.5 V -2.0 V 60 g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 10 V RL + I D 0.01 0.1 ID - Drain Current (mA) 1 200 30 100 0 0 0.01 0.1 ID - Drain Current (mA) 1 4 Siliconix S-52424--Rev. E, 14-Apr-97 SST/U401 Series Typical Characteristics (Cont'd) 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 8 6 VDS = 0 V 5V 6 VDS = 0 V 4 5V 2 15 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 4 2 15 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 5 g fs - Forward Transconductance ( m S) Output Conductance vs. Drain Current VGS(off) = -1.5 V VDS = 15 V f = 1 kHz 20 Equivalent Input Noise Voltage vs. Frequency VDG = 15 V 4 (nV / Hz) e n - Noise Voltage 16 3 TA = -55_C 2 25_C 1 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 12 ID @ 200 mA 8 4 VGS = 0 V 0 10 100 1k f - Frequency (Hz) 10 k 100 k 4.0 g fs - Forward Transconductance (mS) Common-Source Forward Transconductance vs. Drain Current VGS(off) = -1.5 V VDS = 15 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( W ) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 30 3.2 400 rDS gos g os - Output Conductance ( mS) 24 2.4 TA = -55_C 300 1.6 25_C 125_C 200 rDS @ ID = 100 mA VGS = 0 V gos @ VDG = 15 V VGS = 0 V f = 1 kHz 18 12 0.8 100 6 0 0.01 0.1 ID - Drain Current (mA) 1 0 0 -1.0 -1.5 -2.0 VGS(off) - Gate-Source Cutoff Voltage (V) -0.5 -2.5 0 Siliconix S-52424--Rev. E, 14-Apr-97 5 |
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